| PART |
Description |
Maker |
| 351HE0A1ZA 351HE1A1ZA 351HE2A1ZA 351HE3A1ZA 351HE0 |
1/2 mm)
Single Turn Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm)
POSITION, ROTARY SENSOR-HALL EFFECT, 270deg ROHS COMPLIANT PACKAGE
POSITION, ROTARY SENSOR-HALL EFFECT, 360deg
POSITION, ROTARY SENSOR-HALL EFFECT, 90deg
POSITION, ROTARY SENSOR-HALL EFFECT, 180deg
|
Vishay Siliconix
Vishay Intertechnology, Inc.
VISHAY SPECTROL
|
| HAL800 HAL800UT-A HAL800UT-K |
Programmable Linear Hall Effect Sensor 可编程线性霍尔效应传感器
Programmable Linear Hall Effect Sensor MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT
|
Micronas Semiconductor Holding AG
|
| AH182-WL-7 |
IC HALL SENSOR LP 10MA SOT-23 MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.30V, RECTANGULAR, SURFACE MOUNT
|
Diodes, Inc.
|
| HAL560 HAL566 HAL560SF-K HAL566SF-K HAL560SF-A HAL |
Two-Wire Hall Effect Sensor Family 双线霍尔效应传感器系
Two-Wire Hall Effect Sensor Family MAGNETIC FIELD SENSOR-HALL EFFECT, 46-52mT, RECTANGULAR, THROUGH HOLE MOUNT
|
Micronas Semiconductor Holding AG
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| HAL320SF-E |
IC HALL EFFECT SENSOR SOT-89B MAGNETIC FIELD SENSOR-HALL EFFECT, -2.5-2.5mT, 0.17-0.25V, RECTANGULAR, SURFACE MOUNT
|
Micronas Semiconductor Holding AG
|
| HAL54X HAL542SF-E HAL542SF-K HAL543SF-E HAL543SF-K |
Hall-Effect Sensor Family
MAGNETIC FIELD SENSOR-HALL EFFECT, 15-33mT, 0-20mA, RECTANGULAR, SURFACE MOUNT
|
MICRONAS SEMICONDUCTOR HOLDING AG
|
| AH1803-SNG-7 AH1803-WG-7 AH1803 |
MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SENSOR
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 0.1-2.8V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, 3 PIN
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| AN48810B |
Semiconductor Sensor - Hall ICs
Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation
|
Panasonic Corporation
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
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